, d nc. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MJH16006 description ? collector-emitter sustaining voltage- : vcecxsus) = 450v(min) ? high switching speed applications ? designed for high-voltage .high-speed, power switching in inductive circuits where fall time is critical. they are partic- ularly suited for line operated switch-mode applications. typical applications: ? switching regulators ? inverters ? solenoid and relay drivers ? motor controls ? deflection circuits absolute maximum ratings(ta=250c) symbol vcev vceo(sus) vebo ic i cm ib ibm pc tj tstg parameter collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous base current-peak collector power dissipation @t0=25'c junction temperature storage temperature value 850 450 6 8 16 6 12 125 150 -65-150 unit v v v a a a a w 'c 'c thermal characteristics symbol rth j-c parameter thermal resistance, junction to case max 1.0 unit ?c/w i 1 2 3 pin 1.base 2. collector 3. emi tier to-3pn package ?. g -wl'*- l -?? 0 dim a b c d e f g h j k l n q r s u y mm win 19.90 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.50 1.90 10.89 4.90 3.35 1.995 5.90 9.90 max 20.10 15.70 4.90 1.10 2.10 3.60 3.10 3.40 0.605 20.70 2.10 10.91 5.10 3.45 2.005 6.10 10.10 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors entourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor MJH16006 electrical characteristics tc=25c unless otherwise specified symbol vceo(sus) vce(sat)-i vce(sat)-2 vee(sat) icev iger iebo hfe cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain output capacitance conditions lc=100ma; ib=0 lc= 3a; ib= 0.4a lc= 5a; ib= 0.66a lc=5a; ib=0.66a,tc=100'c lc= 5a; ib= 0.66a lc=5a; ib=0.66a,tc=100'c vcev=850v;vbe(off)=1.5v vcev=850v;vbe(off)=1 .5v;tc=100c vce= 850v; rbe= 50 n ,tc= 100'c veb= 6v; lc=0 lc= 8a ; vce= 5v le=0;vcb=10v;f,est=1.0khz min 450 5 typ. max 2.5 3.0 3.0 1.5 1.5 0.25 1.5 2.5 1.0 350 unit v v v v ma ma ma pf switching times;resistive load td tr ts tf delay time rise time storage time fall time lc= 5a , vcc= 250v; rb2= 4 q ; ib1= 0.66a; ib2= -1 .3a;pw= 30 u s; duty cycle =s 2.0% 20 85 1000 70 50 250 2500 250 ns ns ns ns
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